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CY14B101L Datasheet

Manufacturer: Cypress (now Infineon)
CY14B101L datasheet preview

Datasheet Details

Part number CY14B101L
Datasheet CY14B101L_CypressSemiconductor.pdf
File Size 1.22 MB
Manufacturer Cypress (now Infineon)
Description 1-Mbit (128K x 8) nvSRAM
CY14B101L page 2 CY14B101L page 3

CY14B101L Overview

The Cypress CY14B101L is a fast static RAM with a nonvolatile element in each memory cell. The embedded nonvolatile elements incorporate QuantumTrap technology producing, the world’s most reliable nonvolatile memory. The SRAM provides infinite read and write cycles;.

CY14B101L Key Features

  • 25 ns, 35 ns, and 45 ns access times
  • STORE to QuantumTrapTM nonvolatile elements is initiated by software, device pin, or AutostoreTM on power down
  • RECALL to SRAM initiated by software or power up
  • Infinite READ, WRITE, and RECALL cycles
  • 10 mA typical ICC at 200 ns cycle time
  • 200,000 STORE cycles to quantum trap
  • 20-year data retention @ 55°C
  • Single 3V operation +20%, -10%
  • mercial and industrial temperature
Cypress (now Infineon) logo - Manufacturer

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CY14B101K 1 Mbit (128K x 8) nvSRAM
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CY14B101MA 1-Mbit nvSRAM
CY14B101NA 1-Mbit nvSRAM
CY14B101PA 1-Mbit (128K x 8) Serial (SPI) nvSRAM
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